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| HiPerFASTTM IGBT with Diode Combi Pack V CES I C25 V CE(sat) 2.3 V 2.5 V t fi 100ns 120ns IXGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 500 500 20 30 75 50 200 600 600 20 30 75 50 200 V V V V A A A A TO-264 AA VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25C G C E G = Gate, E = Emitter, C = Collector, TAB = Collector ICM = 100 @ 0.8 V CES 300 300 Features W C C C Nm/lb.in. g C q q q -55 ... +150 150 -55 ... +150 Mounting torque (M4) 0.9/6 10 300 q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50N50 50N60 TJ = 25C TJ = 125C 500 600 2.5 V V V mA mA nA V V q q q q BVCES VGE(th) ICES IGES VCE(sat) IC IC = 500 mA, VGE = 0 V = 500 mA, VCE = VGE q AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 5.5 250 15 100 VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages q q 50N50BU1 50N60BU1 2.3 2.5 q q Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97510A(1/98) (c) 2000 IXYS All rights reserved 1-6 IXGK50N50BU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 S IXGK50N60BU1 TO-264 AA Outline gfs IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % Remarks: Add capacitance from IXGH50N60B (DS95585B) Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50N50 50N60 50N50 50N60 50N50 50N60 50N50 50N60 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 200 50 70 50 50 110 80 150 1.8 50 60 3 200 100 250 2.6 4.2 150 nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns mJ mJ 0.42 K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 3.0 0.15 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.7 19 175 35 33 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C 0.75 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-6 IXGK50N50BU1 100 TJ = 25C IXGK50N60BU1 80 VGE = 15V 13V 11V 9V 7V 200 160 TJ = 25C VGE = 15V 13V 11V 9V IC - Amperes 60 40 20 5V IC - Amperes 120 7V 80 40 5V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics 100 Figure 2. Extended Output Characteristics 1.6 VCE (sat) - Normalized 80 TJ = 125C V = 15V GE 13V 11V 9V VGE = 15V 1.4 1.2 1.0 IC = 25A IC = 50A IC = 100A IC - Amperes 60 40 7V 0.8 0.6 0.4 25 5V 20 0 0 1 2 3 4 5 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 100 VCE = 10V 10000 f = 1Mhz Ciss 80 Capacitance - pF IC - Amperes 1000 60 40 TJ = 125C TJ = 25C 100 Coss Crss 20 0 0 2 4 6 8 10 VGE - Volts 10 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 5. Admittance Curves Figure 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-6 IXGK50N50BU1 6 TJ = 125C IXGK50N60BU1 12 12 RG = 4.7 E(ON) 6 5 TJ = 125C E(ON) IC = 100A E(OFF) 5 E(ON) - millijoules 10 10 E(OFF) - milliJoules E(OFF) - millijoules 4 3 2 1 0 0 20 40 60 80 E(OFF) 8 6 4 2 0 100 E(ON) - millijoules 4 3 E(ON) 8 6 IC = 50A 2 1 0 E(OFF) E(ON) IC =25A E(OFF) 4 2 0 60 0 10 20 30 40 50 IC - Amperes RG - Ohms Figure 7. Dependence of EON and EOFF on IC. 20 IC =50A VCE = 250V Figure 8. Dependence of EON and EOFF on RG. 600 100 15 IC - Amperes VGE - Volts dV/dt < 5V/ns 5 1 0 0 50 100 150 200 250 300 0.1 0 100 200 300 400 500 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance (c) 2000 IXYS All rights reserved 10 10 TJ = 125C RG = 5.2 1 4-6 IXGK50N50BU1 IXGK50N60BU1 (c) 2000 IXYS All rights reserved 5-6 IXGK50N50BU1 IXGK50N60BU1 (c) 2000 IXYS All rights reserved 6-6 |
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